Resistive random access memory

US9972779B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Frederick Chen · Hsinchu, TW
• Ping Wang
• Shao-Ching Liao · Taichung, TW
• Po-Yen Hsu · New Taipei, TW
• Yi-Hsiu Chen · Hsinchu, TW
• Ting-Ying Shen · Chiayi, TW
• Bo-Lun Wu · 埔鹽鄉, TW
• Meng-Hung Lin · Taichung, TW

Key dates

• Filing date: Dec 14, 2015
• Grant date: May 15, 2018
• Expiry date: Dec 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The bottom electrode is disposed over a substrate. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer as an oxygen supply layer is at least disposed at sidewalls of the oxygen exchange layer.