Method of making a transistor
US9978602B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 26, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Oct 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a transistor comprising the preparation of a stack of layers of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and an initial semiconductor layer are successively disposed. The method includes the formation of at least one oxide pad extending from a top face of the insulating layer, the formation of an additional layer made from semiconductor material covering the oxide pad and intended to form a channel for the transistor, the formation of a gate stack above the oxide pad, and the formation of a source and drain on either side of the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.