Semiconductor device with an interconnect and a method for manufacturing thereof

US9984917B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Kuehn · Munich, DE
• Martin Bartels · Dresden, DE
• Henning Feick · Dresden, DE
• Dirk Offenberg · Dresden, DE
• Anton Steltenpohl · Munich, DE
• Hans Taddiken · Munich, DE
• Ines Uhlig · Dresden, DE

Key dates

• Filing date: May 21, 2014
• Grant date: May 29, 2018
• Expiry date: May 21, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.