Inverted damascene interconnect structures
US9984919B1 · kind B1 · utility
9Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2017 |
| Grant date | May 29, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and methods of fabricating an interconnect structure. A first section of a mandrel is covered with a feature of an etch mask. A top surface of a second section of the mandrel is exposed by the feature of the etch mask and is recessed with an etching process. A conductive via is formed that reproduces a shape of the first section of the mandrel, and a conductive line is formed that reproduces a shape of the second section of the mandrel. The mandrel is removed to release the conductive via and the conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.