Electronic device including a cascode circuit having principal drive and bypass transistors

US9985022B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Woochul Jeon · Phoenix, US
• Ali Salih · Mesa, US

Key dates

• Filing date: Oct 5, 2016
• Grant date: May 29, 2018
• Expiry date: Oct 5, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/05

Abstract

An electronic device can include a first transistor including a first gate electrode; and a second transistor including a second gate electrode. The first and second transistors can be electrically connected in a parallel arrangement, wherein the transistors have one or more different characteristics. For example, gate length, barrier layer thickness, gate-to-drain distance, leakage current, on-state electron density, or the like may be different between the transistors. The difference in characteristics can help to reduce degradation and improve the lifetime of the first transistor.