Method for manufacturing SiC epitaxial wafer
US9988738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2013 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H—SiC(0001) having an off-angle of less than 5° as a main surface at a first temperature of 1480° C. or higher and 1530° C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.