Wafer grounding and biasing method, apparatus, and application
US9991147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2014 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Nov 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2008
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.