Magnetic memory and manufacturing method of the same
US9991313B2 · kind B2 · utility
9Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Mar 12, 2015 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Mar 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
Abstract
According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.