Patent · US Active

Magnetic memory and manufacturing method of the same

US9991313B2 · kind B2 · utility

9Cited by
1References
16Claims
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Key dates

Filing dateMar 12, 2015
Grant dateJun 5, 2018
Priority date
Expiry dateMar 12, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D48/40

Abstract

According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.