Semiconductor device

US9991373B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE

Key dates

• Filing date: Dec 6, 2016
• Grant date: Jun 5, 2018
• Expiry date: Dec 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an embodiment, a semiconductor device includes a substrate, a Group III nitride based transistor arranged on a front surface of the substrate, and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the substrate, and conductive material extending from the front surface to the rear surface of the substrate. The via tapers from the front surface to the rear surface of the substrate.