Fabrication method of a stack of electronic devices

US9997395B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Claire Fenouillet-Beranger · Grenoble, FR
• Frederic Gaillard · Grenoble, FR
• Benoit Mathieu · Grenoble, FR
• Fabrice Nemouchi · Moirans, FR

Key dates

• Filing date: Jun 7, 2017
• Grant date: Jun 12, 2018
• Expiry date: Jun 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants.