Through vias and methods of formation thereof

US9997443B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Helmut Brech · Lappersdorf, DE
• Albert Birner · Regensburg, DE

Key dates

• Filing date: Feb 25, 2013
• Grant date: Jun 12, 2018
• Expiry date: Jul 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with an embodiment of the present invention, a semiconductor chip includes a device region disposed in or over a substrate, a doped region disposed in the device region, and a through via disposed in the substrate. The through via extends through the doped region.