Power MOSFET with integrated drivers in a common package
USRE41719E1 · kind E1 · reissue
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9References
12Claims
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Key dates
| Filing date | Jul 15, 2005 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jul 15, 2025 |
Classification
- Technology area (CPC —)General
Abstract
A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.