Method for manufacturing semiconductor device
USRE44236E1 · kind E1 · reissue
Assignees
Inventors
Key dates
| Filing date | Oct 12, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Oct 12, 2031 |
Classification
- Technology area (CPC —)General
Abstract
A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.