Method and apparatus for plasma dicing a semi-conductor wafer
USRE46339E1 · kind E1 · reissue
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4References
42Claims
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Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC —)General
Abstract
The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.