Substrate support providing gap height and planarization adjustment in plasma processing chamber
USRE47275E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2015 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Oct 15, 2035 |
Classification
- Technology area (CPC —)General
Abstract
A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.