Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

USRE48378E1 · kind E1 · reissue

Assignee

• II-VI DELAWARE, INC. · US

Inventors

• Ilya Zwieback · Township of Washington, US
• Ping Wu · Hackettstown, US
• Varatharajan Rengarajan · Flanders, US
• Avinash Gupta · Gainesville, US
• Thomas E. Anderson · Normal, US
• Gary E. Ruland · Morristown, US
• Andrew E. Souzis · Ramsey, US
• Xueping Xu · Vernon, US

Key dates

• Filing date: May 1, 2017
• Grant date: Jan 5, 2021
• Expiry date: May 1, 2037

Classification

• Technology area (CPC —): General

Abstract

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.