Patent · US Active

Lateral trench transistor, as well as a method for its production

US8431988B2 · kind B2 · utility

0Cited by

4References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz Hirler · Isen, DE
Uwe Wahl · Munich, DE
Thorsten Meyer · Regensburg, DE
Michael Rüb · Faak am See, AT
Armin Willmeroth · Friedberg, DE
Markus Schmitt · Neubiberg, DE
Carolin Tolksdorf · Ebersberg, DE
Carsten Schäffer · Sattendorf, AT

Key dates

Filing date	Oct 28, 2005
Grant date	Apr 30, 2013
Priority date	—
Expiry date	Mar 8, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.