Daniel B. Aubertine
8Patents
4h-index
18Co-inventors
50Inventor score
Filing activity: Jul 27, 2012 → Oct 6, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9728464B2 | Self-aligned 3-D epitaxial structures for MOS device fabrication | Electricity | 25 | Active |
| US9343559B2 | Nanowire transistor devices and forming techniques | Electricity | 22 | Active |
| US9812524B2 | Nanowire transistor devices and forming techniques | Electricity | 9 | Active |
| US10373977B2 | Transistor fin formation via cladding on sacrificial core | Electricity | 4 | Active |
| US9893149B2 | High mobility strained channels for fin-based transistors | Electricity | 2 | Active |
| US10403626B2 | Fin sculpting and cladding during replacement gate process for transistor channel applications | Electricity | 0 | Active |
| US12046517B2 | Self-aligned 3-D epitaxial structures for MOS device fabrication | Electricity | 0 | Active |
| US10879241B2 | Techniques for controlling transistor sub-fin leakage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.