Method to produce a porous oxygen-silicon layer

US6593251B2 · kind B2 · utility

Assignee

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

• Mikhail Baklanov · Veltem-Beisem, BE
• Denis Shamiryan · Heverlee, BE
• Karen Maex · Herent, BE
• Serge Vanhaelemeersch · Leuven, BE

Key dates

• Filing date: Jul 9, 2001
• Grant date: Jul 15, 2003
• Expiry date: Jul 9, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention concerns a method to produce a porous oxygen-silicon insulating layer comprising following steps:applying a silicon oxygen layer to a substrateexposing the said substrate to a HF ambient.