Frederick P. Giles
8Patents
7h-index
11Co-inventors
49Inventor score
Filing activity: Aug 10, 2001 → Apr 21, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6921697B2 | Method for making trench MIS device with reduced gate-to-drain capacitance | Electricity | 23 | Expired |
| US6882000B2 | Trench MIS device with reduced gate-to-drain capacitance | Electricity | 19 | Expired |
| US7012005B2 | Self-aligned differential oxidation in trenches by ion implantation | Electricity | 16 | Expired |
| US7494876B1 | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same | Electricity | 14 | Expired |
| US6903412B2 | Trench MIS device with graduated gate oxide layer | Electricity | 11 | Expired |
| US6709930B2 | Thicker oxide formation at the trench bottom by selective oxide deposition | Electricity | 10 | Expired |
| US6875657B2 | Method of fabricating trench MIS device with graduated gate oxide layer | Electricity | 7 | Expired |
| US6849898B2 | Trench MIS device with active trench corners and thick bottom oxide | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.