Gary L. Patton
6Patents
5h-index
18Co-inventors
56Inventor score
Filing activity: Mar 6, 1989 → Jan 29, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4997776A | Complementary bipolar transistor structure and method for manufacture | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5352912A | Graded bandgap single-crystal emitter heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5208170A | Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing | Electricity | 29 | Expired |
| US5340753A | Method for fabricating self-aligned epitaxial base transistor | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4951115A | Complementary transistor structure and method for manufacture | Electricity | 10 | Expired |
| US6429101B1 | Method of forming thermally stable polycrystal to single crystal electrical contact structure | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.