Method of forming thermally stable polycrystal to single crystal electrical contact structure
US6429101B1 · kind B1 · utility
1Cited by
18References
57Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a thermally stable ohmic contact structure that includes a region of monocrystalline semiconductor and a region of polycrystalline semiconductor. At least one region of dielectric material is formed between at least a portion of the region of monocrystalline semiconductor and the region of polycrystalline semiconductor, thereby controlling grain growth of the polycrystalline semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.