Gust Perlegos
6Patents
6h-index
6Co-inventors
56Inventor score
Filing activity: Feb 21, 1984 → Sep 19, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4822750A | MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide | Electricity | 69 | Expired |
| US4612640A | Error checking and correction circuitry for use with an electrically-programmable and electrically-erasable memory array | Physics | 69 | Expired |
| US4701776A | MOS floating gate memory cell and process for fabricating same | Electricity | 58 | Expired |
| US4725984A | CMOS eprom sense amplifier | Physics | 54 | Expired |
| US4617651A | Redundancy circuit for use in a semiconductor memory array | Physics | 53 | Expired |
| US7423912B2 | SONOS memory array with improved read disturb characteristic | Physics | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.