Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
US5557147A · kind A · utility
Assignees
Inventors
- Jun Sugiura
- Osamu Tsuchiya
- Makoto Ogasawara
- Fumio Ootsuka
- Kazuyoshi Torii
- Isamu Asano
- Nobuo Owada
- Mitsuaki Horiuchi
- Tsuyoshi Tamaru
- Hideo Aoki
- Nobuhiro Otsuka
- Seiichirou Shirai
- Masakazu Sagawa
- Yoshihiro Ikeda
- Masatoshi Tsuneoka
- Toru Kaga
- Tomotsugu Shimmyo
- Hidetsugu Ogishi
- Osamu Kasahara
- Hiromichi Enami
- Atsushi Wakahara
- Hiroyuki Akimori
- Sinichi Suzuki
- Keisuke Funatsu
- Yoshinao Kawasaki
- Tunehiko Tubone
- Takayoshi Kogano
- Ken Tsugane
Key dates
| Filing date | Apr 19, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Apr 19, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions includ…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.