Hong-Hsiang Tsai
6Patents
5h-index
12Co-inventors
56Inventor score
Filing activity: Sep 15, 1995 → May 6, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5763306A | Method of fabricating capacitor over bit line COB structure for a very high density DRAM applications | Electricity | 41 | Expired |
| US5917748A | Multi-level DRAM sensing scheme | Physics | 17 | Expired |
| US6352896B1 | Method of manufacturing DRAM capacitor | Electricity | 9 | Expired |
| US5691213A | Low capacitance input/output integrated circuit | Electricity | 9 | Expired |
| US6423594B1 | Method of fabricating deep trench capacitor | Electricity | 5 | Expired |
| US8072067B2 | Semiconductor structure | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.