Patent · US Active

Ultra thin seed layer for CPP or TMR structure

US7646568B2 · kind B2 · utility

9Cited by
8References
16Claims
0Family size

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Inventors

Key dates

Filing dateDec 23, 2005
Grant dateJan 12, 2010
Priority date
Expiry dateOct 23, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49021
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.