Magnetoresistive spin valve sensor with tri-layer free layer
US7333306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Aug 3, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.