FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
US6773515B2 · kind B2 · utility
111Cited by
7References
11Claims
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Key dates
| Filing date | Jan 16, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Apr 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.