FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
US7262941B2 · kind B2 · utility
104Cited by
15References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Jan 29, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.