Method and apparatus for determining process rate
US11056322B2 · kind B2 · utility
0Cited by
13References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 3, 2017 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Dec 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.