Min Tae Ryu
5Patents
0h-index
15Co-inventors
31Inventor score
Filing activity: Aug 12, 2021 → Nov 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12408382B2 | Semiconductor memory device having a confinement layer with a two-dimensional electron gas in the confinement layer | Electricity | 0 | Active |
| US12075611B2 | Semiconductor memory device | Physics | 0 | Active |
| US12402301B2 | Semiconductor memory device having shield layer between peripheral circuit and cell array structures | Physics | 0 | Active |
| US11887653B2 | Memory devices | Electricity | 0 | Active |
| US12080791B2 | Semiconductor memory device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.