Patrick Rabinzohn
6Patents
4h-index
13Co-inventors
54Inventor score
Filing activity: Dec 21, 1987 → Sep 24, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5378309A | Method for controlling the etching profile of a layer of an integrated circuit | Electricity | 33 | Expired |
| US4892835A | Method of manufacturing a field effect transistor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4889824A | Method of manufacture semiconductor device of the hetero-junction bipolar transistor type | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4803177A | Method of forming interconnections and crossings between metallization levels of an integrated circuit | Emerging Cross-Sectional Technologies | 7 | Expired |
| US12421596B2 | Method and apparatus for processing surface of a semiconductor substrate | Electricity | 0 | Active |
| US11075057B2 | Device for treating an object with plasma | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.