Rick Carter
7Patents
3h-index
21Co-inventors
53Inventor score
Filing activity: Dec 13, 2007 → Nov 11, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8232186B2 | Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure | Electricity | 11 | Active |
| US9806170B1 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | Electricity | 10 | Active |
| US8053306B2 | PFET with tailored dielectric and related methods and integrated circuit | Electricity | 5 | Active |
| US10347543B2 | FDSOI semiconductor device with contact enhancement layer and method of manufacturing | Electricity | 3 | Active |
| US8524591B2 | Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma | Electricity | 2 | Active |
| US10522655B2 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | Electricity | 2 | Active |
| US11217678B2 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.