Ryan M. Martin
6Patents
2h-index
20Co-inventors
43Inventor score
Filing activity: Sep 17, 2009 → Oct 18, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8937299B2 | III-V finFETs on silicon substrate | Electricity | 35 | Active |
| US9018084B2 | Tapered fin field effect transistor | Emerging Cross-Sectional Technologies | 8 | Active |
| US8232171B2 | Structure with isotropic silicon recess profile in nanoscale dimensions | Emerging Cross-Sectional Technologies | 1 | Active |
| US9929334B2 | Josephson junction with spacer | Electricity | 1 | Active |
| US10170679B2 | Josephson junction with spacer | Electricity | 0 | Active |
| US8449781B2 | Selective etch back process for carbon nanotubes intergration | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.