Patent · US Active

Faceted epitaxial source/drain regions

US10756184B2 · kind B2 · utility

1Cited by

7References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

George R. Mulfinger · Gansevoort, US
Timothy J. McArdle · Ballston Lake, US
Judson R. Holt · Wappingers Falls, US
Steffen Sichler · Dresden, DE
Omur Isil Aydin · Dresden, DE
Wei Hong · Clifton Park, US
Yi Qi · Niskayuna, US
Hui Zang · Guilderland, US
Liu Jiang · Clifton Park, US

Key dates

Filing date	Nov 5, 2018
Grant date	Aug 25, 2020
Priority date	—
Expiry date	Nov 5, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to faceted epitaxial source/drain regions and methods of manufacture. The structure includes: a gate structure over a substrate; an L-shaped sidewall spacer located on sidewalls of the gate structure and extending over the substrate adjacent to the gate structure; and faceted diffusion regions on the substrate, adjacent to the L-shaped sidewall spacer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.