Method for producing group III nitride compound semiconductor substrates using ZnO release layers
US5846844A · kind A · utility
58Cited by
9References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 7, 1996 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Feb 7, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/113
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.