Thibaut David
4Patents
2h-index
8Co-inventors
30Inventor score
Filing activity: Mar 12, 2014 → Jun 2, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9257293B2 | Methods of forming silicon nitride spacers | Electricity | 8 | Active |
| US9583339B2 | Method for forming spacers for a transistor gate | Electricity | 3 | Active |
| US9934973B2 | Method for obtaining patterns in a layer | Emerging Cross-Sectional Technologies | 0 | Active |
| US9953807B2 | Method for producing patterns by ion implantation | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.