Dual magnetic tunnel junction (DMTJ) stack design
US10797225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance×area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RACAP is formed on PL2 to provide higher PL2 stability. The condition RA1<RA2 and RACAP<RA2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.