Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices

US10784310B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Huanlong Liu · New York, US
• Guenole Jan · San Jose, US
• Ru-Ying Tong · Los Gatos, US
• Jian Zhu · Pittsburgh, US
• Yuan-Jen Lee · Fremont, US
• Jodi Mari Iwata · Redwood City, US
• Sahil Patel · Fremont, US
• Vignesh Sundar · Fremont, US

Key dates

• Filing date: Nov 8, 2018
• Grant date: Sep 22, 2020
• Expiry date: Nov 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.