Spin on memory cell active layer doped with metal ions
US7344913B1 · kind B1 · utility
1Cited by
25References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 6, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Feb 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.