Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures
US7232765B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jul 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.