Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US7335609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Aug 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.