Gap-fill depositions in the formation of silicon containing dielectric materials
US7456116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2004 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | May 30, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.