Yaobin Feng
10Patents
2h-index
17Co-inventors
43Inventor score
Filing activity: Jul 26, 2018 → Dec 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10804283B2 | Openings layout of three-dimensional memory device | Electricity | 8 | Active |
| US11574919B2 | Openings layout of three-dimensional memory device | Electricity | 2 | Active |
| US10727056B2 | Method and structure for cutting dense line patterns using self-aligned double patterning | Electricity | 1 | Active |
| US11903195B2 | Openings layout of three-dimensional memory device | Electricity | 1 | Active |
| US12356616B2 | Openings layout of three-dimensional memory device | Electricity | 0 | Active |
| US11251043B2 | Method and structure for cutting dense line patterns using self-aligned double patterning | Electricity | 0 | Active |
| US11378525B2 | Systems and methods for evaluating critical dimensions based on diffraction-based overlay metrology | Electricity | 0 | Active |
| US10811363B2 | Marks for locating patterns in semiconductor fabrication | Electricity | 0 | Active |
| US12347684B2 | Method and structure for cutting dense line patterns using self-aligned double patterning | Electricity | 0 | Active |
| US11162907B2 | Systems and methods for evaluating critical dimensions based on diffraction-based overlay metrology | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.