Perpendicular magnetic fixed layer with high anisotropy
US10008663B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Apr 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an MTJ memory element, which includes a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the tunnel junction layer and having a first invariable magnetization direction perpendicular to a layer plane thereof; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction that is perpendicular to a layer plane thereof and is opposite to the first invariable magnetization direction. The magnetic fixed layer structure includes multiple stacks of a trilayer unit structure, which includes three layers of different materials with at least one of the three layers of different materials being magnetic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.