Xiaojie Hao
14Patents
3h-index
14Co-inventors
49Inventor score
Filing activity: Dec 4, 2014 → Mar 26, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10153017B2 | Method for sensing memory element coupled to selector device | Electricity | 5 | Active |
| US10008663B1 | Perpendicular magnetic fixed layer with high anisotropy | Electricity | 4 | Active |
| US9082951B2 | Magnetic random access memory with perpendicular enhancement layer | Performing Operations; Transporting | 4 | Active |
| US9502092B2 | Unipolar-switching perpendicular MRAM and method for using same | Electricity | 3 | Active |
| US9306154B2 | Magnetic random access memory with perpendicular enhancement layer | Performing Operations; Transporting | 3 | Active |
| US9871191B2 | Magnetic random access memory with ultrathin reference layer | Electricity | 2 | Active |
| US9679625B2 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Electricity | 2 | Active |
| US10032979B2 | Magnetic memory element with iridium anti-ferromagnetic coupling layer | Performing Operations; Transporting | 2 | Active |
| US9831421B2 | Magnetic memory element with composite fixed layer | Performing Operations; Transporting | 2 | Active |
| US10559624B2 | Selector device having asymmetric conductance for memory applications | Electricity | 1 | Active |
| US10484921B2 | Wireless hotspot handover method, mobile terminal and storage medium | Electricity | 1 | Active |
| USRE47975E1 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | General | 0 | Active |
| US10910555B2 | Magnetic memory element incorporating perpendicular enhancement layer | Electricity | 0 | Active |
| US9543506B2 | Magnetic random access memory with tri-layer reference layer | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.