Selective deposition of metallic films
US10014212B2 · kind B2 · utility
374Cited by
54References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 14, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.