Pass-through interconnect structure for microelectronic dies and associated systems and methods
US10020287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jan 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Pass-through interconnect structures for microelectronic dies and associated systems and methods are disclosed herein. In one embodiment, a microelectronic die assembly includes a support substrate, a first microelectronic die positioned at least partially over the support substrate, and a second microelectronic die positioned at least partially over the first die. The first die includes a semiconductor substrate, a conductive trace extending over a portion of the semiconductor substrate, a substrate pad between the trace and the portion of the semiconductor substrate, and a through-silicon via (TSV) extending through the trace, the substrate pad, and the portion of the semiconductor substrate. The second die is electrically coupled to the support substrate via a conductive path that includes the TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.