Stress induction in 3D device channel using elastic relaxation of high stress material
US10020398B1 · kind B1 · utility
10Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Jan 11, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jan 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as deposited stress due to crystal lattice differences with the substrate. A device channel layer is formed on the stress adjustment layer. Cuts are etched through the device channel layer and the stress adjustment layer to release the stress adjustment layer to induce stress in the device channel layer. Source/drain regions are formed adjacent to the device channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.