Patent · US Active

Semiconductor device including an LDMOS transistor and a RESURF structure

US10026806B2 · kind B2 · utility

0Cited by

17References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE
Michaela Braun · Regensburg, DE
Christian Eckl · Regensburg, DE

Key dates

Filing date	Mar 14, 2017
Grant date	Jul 17, 2018
Priority date	—
Expiry date	Mar 14, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 Ohm·cm, a front surface and a rear surface, an LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate, and a RESURF structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.